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Isamu Akasaki

isamu akasaki, isamu akasaki hiroshi amano and shuji nakamura
Isamu Akasaki 赤崎 勇, Akasaki Isamu, born January 30, 1929 is a Japanese physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride GaN p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well12345

For this and other achievements Isamu Akasaki was awarded the Kyoto Prize in Advanced Technology in 20096 and the IEEE Edison Medal in 20117 He was also awarded the 2014 Nobel prize in Physics, together with Hiroshi Amano and Shuji Nakamura,8 "for the invention of efficient blue light-emitting diodes, which has enabled bright and energy-saving white light sources"

Contents

  • 1 Career
  • 2 Nagoya University Akasaki Institute
  • 3 Professional record
  • 4 Honors and awards
    • 41 Scientific and academic
    • 42 National
  • 5 See also
  • 6 References
  • 7 Further reading
  • 8 External links

Careeredit

Isamu Akasaki

Born in Kagoshima Prefecture, Akasaki graduated from Kyoto University in 1952, and obtained a DrEng degree in Electronics from Nagoya University in 1964 He started working on GaN-based blue LEDs in the late 1960s Step by step, he improved the quality of GaN crystals and device structures9 at Matsushita Research Institute Tokyo, IncMRIT, where he decided to adopt metalorganic vapor phase epitaxy MOVPE as the preferred growth method for GaN

In 1981 he started afresh the growth of GaN by MOVPE at Nagoya University, and in 1985 he and his group succeeded in growing high-quality GaN on sapphire substrate by pioneering the low-temperature LT buffer layer technology1011

This high-quality GaN enabled them to discover p-type GaN by doping with magnesium Mg and subsequent activation by electron irradiation 1989, to produce the first GaN p-n junction blue/UV LED 1989, and to achieve conductivity control of n-type GaN 199012 and related alloys 199113 by doping with silicon Si, enabling the use of hetero structures and multiple quantum wells in the design and structure of more efficient p-n junction light emitting structures

They achieved stimulated emission from the GaN firstly at room temperature in 1990,14 and developed in 1995 the stimulated emission at 388 nm with pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device15 They verified quantum size effect 199116 and quantum confined Stark effect 199717 in nitride system, and in 2000 showed theoretically the orientation dependence of piezoelectric field and the existence of non-/semi-polar GaN crystals,18 which have triggered today’s worldwide efforts to grow those crystals for application to more efficient light emitters

Nagoya University Akasaki Instituteedit

Akasaki Institute

Professor Akasaki’s patents were produced from these inventions, and the patents have been rewarded as royalties Nagoya University Akasaki Institute19 opened on October 20, 2006 The cost of construction of the institute was covered with the patent royalty income to the university, which was also used for a wide range of activities in Nagoya University The institute consists of an LED gallery to display the history of blue LED research/developments and applications, an office for research collaboration, laboratories for innovative research, and Professor Akasaki's office on the top sixth floor The institute is situated in the center of the collaboration research zone in Nagoya University Higashiyama campus

Professional recordedit

with Seiji Morimoto in Sweden
  • 1952-1959 Research Scientist at Kobe Kogyo Corporation now, Fujitsu Ltd
  • 1959-1964 Research Associate, Assistant Professor and Associate Professor, Department of Electronics, Nagoya University
  • 1964-1974 Head of Basic Research Laboratory 4, Matsushita Research Institute Tokyo, Inc
  • 1974-1981 General Manager of Semiconductor Department in the same institute as above
  • 1981-1992 Professor in the Department of Electronics at Nagoya University
  • 1987-1990 Project Leader of “Research and Development of GaN-based Blue Light–Emitting Diode” sponsored by Japan Science and Technology AgencyJST
  • 1992–present Professor Emeritus of Nagoya University, Professor of Meijo University
  • 1993-1999 Project Leader of “Research and Development of GaN-based Short-Wavelength Semiconductor Laser Diode” sponsored by JST
  • 1995-1996 Visiting Professor of Research Center for Interface Quantum Electronics at Hokkaido University
  • 1996-2001 Project Leader of the Japan Society for the Promotion of ScienceJSPS’s “Research for the Future" program”
  • 1996-2004 Project Leader of “High-Tech Research Center for Nitride Semiconductors" at Meijo University, sponsored by MEXT
  • 2001–Present Research Fellow at Akasaki Research Center of Nagoya University
  • 2003-2006 Chairman of “R&D Strategic Committee on the Wireless Devices Based on Nitride Semiconductors” sponsored by METI
  • 2004–Present Director of Research Center for Nitride Semiconductors at Meijo University

Honors and awardsedit

Scientific and academicedit

with Shuji Nakamura and Hiroshi Amano at the Grand Hôtel on December 8, 2014
  • 1989 Japanese Association for Crystal Growth JACG Award
  • 1991 Chu-Nichi Culture Prize20
  • 1994 Technological Contribution Award, Japanese Association for Crystal Growth in commemoration of its 20th anniversary
  • 1995 Heinrich Welker Gold Medal, the International Symposium on Compound Semiconductors
  • 1996 Engineering Achievement Award, the Institute of Electrical and Electronics Engineers / Lasers Electro-Optics Society
  • 1998 Inoue Harushige Award, Japan Science and Technology Agency
  • 1998 C&C Prize, the Nippon Electric Company Corporation21
  • 1998 Laudise Prize, the International Organization for Crystal Growth22
  • 1998 Jack A Morton Award, the Institute of Electrical and Electronics Engineers23
  • 1998 Rank Prize, the Rank Prize Foundation24
  • 1999 Fellow, the Institute of Electrical and Electronics Engineers25
  • 1999 Gordon E Moore Medal for Outstanding Achievement in Solid State Science and Technology, the Electrochemical Society26
  • 1999 Honoris Causa Doctorate, the University of Montpellier II
  • 1999 Toray Science and Technology Prize, Toray Science Foundation27
  • 2001 Asahi Prize, the Asahi Shinbun Cultural Foundation28
  • 2001 Honoris Causa Doctorate, Linkoping University
  • 2002 Outstanding Achievement Award, the Japan Society of Applied Physics
  • 2002 Fujihara Prize, the Fujihara Foundation of Science29
  • 2002 Takeda Award, the Takeda Foundation30
  • 2003 President's Award, the Science Council of Japan SCJ31
  • 2003 Solid State Devices & Materials SSDM Award
  • 2004 Tokai TV Culture Prize
  • 2004 University Professor, Nagoya University
  • 2006 John Bardeen Award, the Minerals, Metals & Materials Society32
  • 2006 Outstanding Achievement Award, the Japanese Association for Crystal Growth
  • 2007 Honorable Lifetime Achievement Award, the 162nd Research Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Japan Society for the Promotion of Science JSPS
  • 2008 Foreign Associate, the US National Academy of Engineering33
  • 2009 Kyoto Prize Advanced Technology, the Inamori Foundation34
  • 2010 Lifetime Professor, Meijo University
  • 2011 Edison Medal, the Institute of Electrical and Electronics Engineers7
  • 2011 Special Award for Intellectual Property Activities, the Japan Science and Technology Agency
  • 2011 Minami-Nippon Culture Prize-Honorable Prize
  • 2014 Nobel Prize in Physics together with prof Hiroshi Amano and prof Shuji Nakamura8
  • 2015 Charles Stark Draper Prize

Nationaledit

Akasaki received the Order of Culture After that, they posed for the photo at the East Garden of the Tokyo Imperial Palace on November 3, 2011
  • 1997 Medal with Purple Ribbon, the Japanese Government35
  • 2002 Order of the Rising Sun, Gold Rays with Neck Ribbon, the Japanese Government36
  • 2004 Person of Cultural Merit, the Japanese Government
  • 2011 Order of Culture, the Japanese Emperor373839

See alsoedit

  • List of Japanese Nobel laureates
  • List of Nobel laureates affiliated with Kyoto University

Referencesedit

  1. ^ "Japanese Journal of Applied Physics" Jsapjp Retrieved 2015-11-10 
  2. ^ "Japanese Journal of Applied Physics" jsapjp Retrieved 2015-11-10 
  3. ^ Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu and Isamu Akasaki: "P-Type Conduction in Mg-doped GaN Treated with Low-Energy Electron Beam Irradiation LEEBI", Jpn J Appl Phys Vol 28, No12, December 1989, pp L2112-L2114, accepted for pub Nov 1989
  4. ^ I Akasaki, H Amano, M Kito and K Hiramatsu :”Photoluminescence of Mg doped p-type GaN and electroluminescence of GaN p-n junction LED” J Cryst Growth, Vol 48&49 pp666-670, 1991
  5. ^ Isamu Akasaki, Hiroshi Amano, Kenji Itoh, Norikatsu Koide and Katsuhide Manabe: “GaN-based UV/blue light emitting devices”, Inst Phys Conf Ser No129, pp 851-856, 1992
  6. ^ "INAMORI FOUNDATION" Inamori-forjp Retrieved 2015-11-10 
  7. ^ a b "IEEE Jack S Kilby Signal Processing Medal Recipients" PDF IEEE Retrieved April 15, 2012 
  8. ^ a b "The 2014 Nobel Prize in Physics - Press Release" Nobelprizeorg Nobel Media AB 2014 Retrieved October 7, 2014 
  9. ^ Y Ohki, Y Toyoda, H Kobayasi and I Akasaki: “Fabrication and properties of a practical blue-emitting GaN m-i-s diode Inst Phys Conf Ser No 63, pp 479-484 Proc of the 9th Intl Symposium on Gallium Arsenide and Related Compounds, 1981
  10. ^ H Amano, N Sawaki I Akasaki and Y Toyoda: "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,"
  11. ^ Isamu Akasaki, Hiroshi Amano, Yasuo Koide, Kazumasa Hiramatsu and Nobuhiko Sawaki: "Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1-xAl xN 0<x < = 0,4 films grown on sapphire substrate by MOVPE", J Crystal Growth, Vol98 1989, pp209-219
  12. ^ H Amano and I Akasaki: "Fabrication and Properties of GaN p-n Junction LED", Mater Res Soc Extended Abstract EA-21, pp165-168, 1990, Fall Meeting 1989
  13. ^ Hiroshi Murakami, Tsunemori Asahi, Hiroshi Amano, Kazumasa Hiramatsu, Nobuhiko Sawaki and Isamu Akasaki: "Growth of Si-doped AlxGa 1-xN on 0001 sapphire substrate by metalorganic vapor phase epitaxy", J Crystal Growth, Vol115 1991, pp 648-651
  14. ^ H Amano, T Asahi and I Akasaki: “Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer” Jpn J Appl Phys Vol 29, pp L205-L206, 1990
  15. ^ Isamu Akasaki, Hiroshi Amano, Shigetoshi Sota, Hiromitsu Sakai, Toshiyuki Tanaka and Masayoshi Koike: "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device" Jpn J Appl Phys, Vol 34 1995 pp L1517-1519, Part 2, No11B, 15 November 1995 accepted for pub October 16, 1995
  16. ^ K Itoh, T Kawamoto, H Amano, K Hiramatsu and I Akasaki: “Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al01Ga09N Layered Structures” Jpn J Appl Phys Vol 30, pp1924-1927, 1991
  17. ^ T Takeuchi, S Sota, M Katsuragawa, M Komori, H Takeuchi, H Amano and I Akasaki: “Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells” Jpn J Appl Phys, Vol36, Pt 2, No 4A, pp L382-385, 1997
  18. ^ Tetsuya Takeuchi, Hiroshi Amano and Isamu Akasaki: "Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells", Jpn J Appl Phys Vol 39, pp 413-416, Part1, No2A, Feb2000 accepted for pub, November 1, 1999
  19. ^ 1 Archived October 17, 2012, at the Wayback Machine
  20. ^ "中日文化賞" 中日新聞 CHUNICHI Web 
  21. ^ "NEC: News Release 98/11/04-01" Neccojp Retrieved 2015-11-10 
  22. ^ "International Organization for Crystal Growth" Iocgorg Retrieved 2015-11-10 
  23. ^ PDF https://webarchiveorg/web/20141013182218/http://wwwieeeorg/documents/morton_rlpdf Archived from the original PDF on October 13, 2014 Retrieved January 7, 2014  Missing or empty |title= help
  24. ^ 2 Archived December 13, 2012, at the Wayback Machine
  25. ^ https://webarchiveorg/web/20121226163602/http://wwwieeeorg/membership_services/membership/fellows/chronology/fellows_1999html Archived from the original on December 26, 2012 Retrieved February 23, 2013  Missing or empty |title= help
  26. ^ "ECS SSS&T Award" Electrochemorg Retrieved 2015-11-10 
  27. ^ "Toray Science and Technology Prize : List of Winners" Toraycom Retrieved 2015-11-10 
  28. ^ The Asahi Shimbun Company "The Asahi Shimbun Company - The Asahi Prize - English Information" Asahicom Retrieved 2015-11-10 
  29. ^ 3dead link
  30. ^ "Social/Economic Well-Being : Technical Achievement: The Development of Blue Light Emitting Semiconductor Devices - Development of the blue light emitting diode and laser diode is the final link in completing the light spectrum for semiconductor devices" Takeda-foundationjp Retrieved 2015-11-10 
  31. ^ "IAP - About IAP" Interacademiesnet Retrieved 2015-11-10 
  32. ^ "Recipient: 2006 John Bardeen Award" Tmsorg Retrieved 2015-11-10 
  33. ^ "NAE Website - Dr Isamu Akasaki" Naeedu Retrieved 2015-11-10 
  34. ^ "INAMORI FOUNDATION" Inamori-forjp Retrieved 2015-11-10 
  35. ^ "Types of Medals" caogojp 
  36. ^ "Orders of the Rising Sun" Caogojp Retrieved 2015-11-10 
  37. ^ "Order of Culture" Caogojp Retrieved 2015-11-10 
  38. ^ 4dead link
  39. ^ "M͎͎" Niftycom Retrieved 2015-11-10 

Further readingedit

  • Insights & Enterprise in PHOTONICS SPECTRA, 54, November 2004
  • Materials Research Society Symposium Proceedings, Volume 639 2000, pages xxiii-xxv

External linksedit

  • Nobel Prize website
  • Compound Semiconductor pp 17–19
  • Naturecom
  • Naturecom

isamu akasaki, isamu akasaki and hiroshi amano, isamu akasaki and qinsheng zhu, isamu akasaki hiroshi amano and shuji nakamura


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