Gate dielectricgate dielectric material, gate dielectric
A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor In state-of-the-art processes, the gate dielectric is subject to many constraints, including:
- Electrically clean interface to the substrate low density of quantum states for electrons
- High capacitance, to increase the FET transconductance
- High thickness, to avoid dielectric breakdown and leakage by quantum tunneling
The capacitance and thickness constraints are almost directly opposed to each other For silicon-substrate FETs, the gate dielectric is almost always silicon dioxide called "gate oxide", since thermal oxide has a very clean interface However, the semiconductor industry is interested in finding alternative materials with higher dielectric constants, which would allow higher capacitance with the same thicknessFurther information: High-k dielectric
- QBD electronics
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gate dielectric, gate dielectric layer, gate dielectric material, gate dielectric thickness, gate dielectrics
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